j. c/ e.iie.u , u na. 20 sterh ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB923 ucovsmr i ivjra ? high collector current:: lc= -20a ? low collector saturation voltage : vce(sat)= -0.5v(max)@lc= -10a ? complement to type 2sd1239 applications ? designed for large current switching of relay drivers, high- speed inverters, converters applications. absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous total power dissipation @ tc=25c junction temperature storage temperature range value -120 -80 -6 -20 100 150 -55-150 unit v v v a w ?c ?c 3 pin l.base j 2. emitter 1 [ 3.collestor(case) ] to-3 package 2 4 -, " t ' ' ' c i ?ju-d 3pl j- l-* /" ^tm"~^ c vv^^x j h3h nun mm min max a 39 joo b 25.30 28.67 c 7.80 8,50 d 0.90 1.10 e t .40 1 .60 silicon pnp power transistor 2SB923 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) icbo iebo rife-1 hfe-2 ft parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain?bandwidth product conditions lc=-1ma; rbe= lc=-1ma;l6=0 le=-1ma;lc=0 ic=-10a;-ib=-1a vcb= -80v; ie= 0 veb= -4v; lc= 0 lc= -1a; vce= -2v lc=-10a;vce=-2v lc= -1a; vce= -2v min -80 -120 -6 70 30 typ. 20 max -0.5 -0.1 -0.1 280 unit v v v v ma ma mhz hpe-1 classifications q 70-140 r 100-200 s 140-280
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